View ATF-551M4_3163015.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

agilent ATF-551M4 low noise enhancement mode pseudomorphic hemt in a miniature leadless package data sheet description agilent technologies ATF-551M4 is a high dynamic range, super low noise, single supply e-phemt gaas fet housed in a thin miniature leadless package. the combination of small device size, super low noise (under 1 db fmin from 2 to 6 ghz), high linearity and low power makes the ATF-551M4 ideal for lna or hybrid module designs in wire- less receiver in the 450 mhz to 10 ghz frequency band. applications include cellular/ pcs/ wcdma handsets and data modem cards, fixed wireless infrastructure in the 2.4, 3.5 ghz and unii frequency bands, as well as 2.4 ghz 802.11b, 5 ghz 802.11a and hiperlan/2 wireless lan pc-cards. note: 1. agilents enhancement mode e-phemt devices are the first commercially available single-supply gaas transistors that do not need a negative gate bias voltage for operation. they can help simplify the design and reduce the cost of receivers and transmitters in many applications in the 450 mhz to 10 ghz frequency range. features ? very low noise figure and high linearity ? single supply enhancement mode technology [1] optimized for 3v operation ? excellent uniformity in product specifications ? 400 micron gate width ? thin miniature package 1.4 mm x 1.2 mm x 0.7 mm ? tape-and-reel packaging option available specifications ? 2 ghz; 2.7v, 10 ma (typ.) ? 24.1 dbm output 3 rd order intercept ? 14.6 dbm output power at 1 db gain compression ? 0.5 db noise figure ? 17.5 db associated gain applications ? low noise amplifier for: C cellular/pcs/wcdma hand- sets and modem cards C 2.4 ghz, 3.5 ghz and unii fixed wireless infrastructure C 2.4 ghz 802.11b wireless lan C 5 ghz 802.11a and hiperlan wireless lan ? general purpose discrete e-phemt for other ultra low noise applications minipak 1.4 mm x 1.2 mm package pin connections and package marking note: top view. package marking provides orientation, product identification and date code. v = device type code x = date code character. a different character is assigned for each month and year. source pin 3 gate pin 2 source pin 1 drain pin 4 vx vx
2 ATF-551M4 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain-source voltage [2] v5 v gs gate-source voltage [2] v -5 to 1 v gd gate drain voltage [2] v -5 to 1 i ds drain current [2] ma 100 i gs gate current [5] ma 1 p diss total power dissipation [3] mw 270 p in max. rf input power dbm +10 t ch channel temperature c 150 t stg storage temperature c -65 to 150 jc thermal resistance [4] c/w 240 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. source lead temperature is 25 c. derate 6 mw/ c for t l > 40 c. 4. thermal resistance measured using 150 c liquid crystal measurement method. 5. device can safely handle +10 dbm rf input power provided i gs is limited to 1 ma. i gs at p 1db drive rf level is bias circuit dependent. see applications section for additional information. product consistency distribution charts [6] v ds (v) figure 1. typical i-v curves. (v gs = 0.1 v per step) i ds (ma) 0.4v 0.5v 0.6v 0.7v 0.3v 02 146 5 37 70 60 50 40 30 20 10 0 gain (dbm) figure 2. capability plot for gain @ 2.7 v, 10 ma. lsl = 15.5, nominal = 17.5, usl = 18.5 15 17 16 18 19 180 150 120 90 60 30 0 cpk = 1.64 stdev = 0.19 -3 std +3 std oip3 figure 3. capability plot for oip3 @ 2.7 v, 10 ma. lsl = 22.0, nominal = 24.1 22 24 23 25 26 150 120 90 60 30 0 cpk = 2.85 stdev = 0.25 -3 std nf figure 4. capability plot for nf @ 2.7 v, 10 ma. nominal = 0.5, usl = 0.9 0.29 0.69 0.49 0.89 1.09 160 120 80 40 0 cpk = 2.46 stdev = 0.06 +3 std note: 6. distribution data sample size is 398 samples taken from 4 different wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. measurements made on production test board. this circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. circuit losses have been de-embedded from actual measurements.
3 ATF-551M4 electrical specifications t a = 25 c, rf parameters measured in a test circuit for a typical device symbol parameter and test condition units min. typ. max. vgs operational gate voltage vds = 2.7v, ids = 10 ma v 0.3 0.47 0.65 vth threshold voltage vds = 2.7v, ids = 2 ma v 0.18 0.37 0.53 idss saturated drain current vds = 2.7v, vgs = 0v a 0.1 3 gm transconductance vds = 2.7v, gm = ? idss/ ? vgs; mmho 110 220 285 ? vgs = 0.75 C 0.7 = 0.05v igss gate leakage current vgd = vgs = -2.7v a95 nf noise figure [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 0.5 0.9 vds = 3v, ids = 20 ma db 0.5 gain gain [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 15.5 17.5 18.5 vds = 3v, ids = 20 ma db 18.0 oip3 output 3 rd order f = 2 ghz vds = 2.7v, ids = 10 ma dbm 22 24.1 intercept point [1] vds = 3v, ids = 20 ma dbm 30.0 p1db 1db compressed f = 2 ghz vds = 2.7v, ids = 10 ma dbm 14.6 output power [1] vds = 3v, ids = 20 ma dbm 16.0 notes: 1. measurements obtained using production test board described in figure 5. typical values were determined from a sample size of 398 parts from 4 wafers. input 50 ? input transmission line including gate bias t (0.3 db loss) input matching circuit _mag = 0.3 _ang = 11 (0.3 db loss) output matching circuit _mag = 0.3 _ang = 9 (0.9 db loss) dut 50 ? output transmission line including gate bias t (0.3 db loss) output figure 5. block diagram of 2 ghz production test board used for noise figure, gain, p1db, oip3, and iip3 measurements. this ci rcuit represents a trade-off between an optimal noise match, maximum oip3 match and associated impedance matching circuit losses. circuit losses h ave been de- embedded from actual measurements. symbol parameter and test condition units min. typ. max. fmin minimum noise figure [2] f = 900 ghz vds = 2.7v, ids = 10 ma db 0.27 f = 2 ghz vds = 2.7v, ids = 10 ma db 0.41 f = 3.9 ghz vds = 2.7v, ids = 10 ma db 0.61 f = 5.8 ghz vds = 2.7v, ids = 10 ma db 0.88 ga associated gain [2] f = 900 ghz vds = 2.7v, ids = 10 ma db 21.8 f = 2 ghz vds = 2.7v, ids = 10 ma db 17.9 f = 3.9 ghz vds = 2.7v, ids = 10 ma db 14.2 f = 5.8 ghz vds = 2.7v, ids = 10 ma db 12.0 oip3 output 3 rd order f = 900 ghz vds = 2.7v, ids = 10 ma dbm 22.1 intercept point [3] f = 3.9 ghz vds = 2.7v, ids = 10 ma dbm 24.3 f = 5.8 ghz vds = 2.7v, ids = 10 ma dbm 24.5 p1db 1db compressed f = 900 ghz vds = 2.7v, ids = 10 ma dbm 14.3 output power [3] f = 3.9 ghz vds = 2.7v, ids = 10 ma dbm 14.5 f = 5.8 ghz vds = 2.7v, ids = 10 ma dbm 14.3 notes: 2. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 3. measurements taken above and below 2 ghz was made using a double stub tuner at the input tuned for low noise and a double stu b tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. ATF-551M4 electrical specifications (see notes 2 and 3, as indicated)
4 ATF-551M4 typical performance curves notes: 1. measurements at 900mhz were made using an icm fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test sys tem. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 3. p1db measurements are performed with passive biasing. quiescent drain current, idsq, is set with zero rf drive applied. as p1db is approached, the drain current may increase or point. at lower values of idsq, the device is running close to class b as power output approache s p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as i s typically done with active biasing. as an example, at a vds = 2.7v and idsq = 5 ma, id increases to 15 ma as a p1db of +14.5 dbm is approached. figure 6. gain vs. i ds and v ds at 900 mhz [1] . i ds ( m a) gain (db) 035 15 530 25 20 10 26 25 24 23 22 21 20 19 18 2v 2.7v 3v figure 7. f m in vs. i ds and v ds at 900 mhz [2] . i ds ( m a) f m in (db) 035 15 530 25 20 10 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 2v 2.7v 3v figure 9. iip3 vs. i ds and v ds at 900 mhz [1] . i ds ( m a) iip3 (db m ) 035 15 530 25 20 10 7 6 5 4 3 2 1 0 -1 -2 2v 2.7v 3v figure 10. p1db vs. i dq and v ds at 900 mhz [1] . i dq ( m a) p1db (db m ) 035 15 530 25 20 10 18 17 16 15 14 13 12 11 10 9 2v 2.7v 3v figure 8. oip3 vs. i ds and v ds at 900 mhz [1] . i ds ( m a) oip3 (db m ) 035 15 530 25 20 10 32 30 28 26 24 22 20 18 16 2v 2.7v 3v
5 ATF-551M4 typical performance curves , continued notes: 1. measurements at 2 ghz with biasing 2.7v, 10 ma were made on a fixed tuned production test board that was tuned for optimal oip 3 match with reasonable noise figure. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable m atch based on production test board requirements. measurements taken other than 2.7v, 10 ma biasing was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measur ements. 2. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system . from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 3. p1db measurements are performed with passive biasing. quiescent drain current, idsq, is set with zero rf drive applied. as p1db is approached, the drain current may increase or point. at lower values of idsq, the device is running close to class b as power output approache s p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as i s typically done with active biasing. as an example, at a vds = 2.7v and idsq = 5 ma, id increases to 15 ma as a p1db of +14.5 dbm is approached. figure 11. gain vs. i ds and v ds at 2 ghz [1] . i ds ( m a) gain (db) 035 15 530 25 20 10 20 19 18 17 16 15 2v 2.7v 3v figure 12. f m in vs. i ds and v ds at 2 ghz [2] . i ds ( m a) f m in (db) 035 15 530 25 20 10 0.6 0.5 0.4 0.3 0.2 0.1 0 2v 2.7v 3v figure 13. oip3 vs. i ds and v ds at 2 ghz [1] . i ds ( m a) oip3 (db m ) 035 15 530 25 20 10 36 32 28 24 20 16 2v 2.7v 3v figure 14. iip3 vs. i ds and v ds at 2 ghz [1] . i ds ( m a) iip3 (db m ) 035 15 530 25 20 10 18 16 14 12 10 8 6 4 2 0 2v 2.7v 3v figure 15. p1db vs. i dq and v ds at 2 ghz [1] . i dq ( m a) p1db (db) 035 15 530 25 20 10 2v 2.7v 3v 17 16 15 14 13 12 11 10
6 ATF-551M4 typical performance curves , continued notes: 1. measurements at 2 ghz were made on a fixed tuned production test board that was tuned for optimal oip3 match with reasonable noise figure at 2.7 v, 10 ma bias. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz was made using a double stub tuner at the input tuned for low nois e and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system . from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 3. p1db measurements are performed with passive biasing. quiescent drain current, idsq, is set with zero rf drive applied. as p1db is approached, the drain current may increase or point. at lower values of idsq, the device is running close to class b as power output approache s p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as i s typically done with active biasing. as an example, at a vds = 2.7v and idsq = 5 ma, id increases to 15 ma as a p1db of +14.5 dbm is approached. figure 16. gain vs. bias over frequency [1] . frequency (ghz) gain (db) 06 3 15 4 2 30 25 20 15 10 5 2v 10 ma 2.7v 10 ma figure 17. fmin vs. bias over frequency [2] . frequency (ghz) fmin (db) 06 3 15 4 2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2v 10 ma 2.7v 10 ma figure 18. oip3 vs. bias over frequency [1] . frequency (ghz) oip3 (dbm) 06 3 15 4 2 26 25 24 23 22 21 20 19 18 2v 10 ma 2.7v 10 ma figure 19. iip3 vs. bias over frequency [1] . frequency (ghz) iip3 (dbm) 06 3 15 4 2 16 14 12 10 8 6 4 2 0 -2 -4 -6 2v 10 ma 2.7v 10 ma figure 20. p1db vs. bias over frequency [1] . frequency (ghz) p1db (dbm) 06 3 15 4 2 16 15 14 13 12 11 10 2v 10 ma 2.7v 10 ma
7 ATF-551M4 typical performance curves , continued notes: 1. measurements at 2 ghz were made on a fixed tuned production test board that was tuned for optimal oip3 match with reasonable noise figure at 2.7 v, 10 ma bias. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable match based on pr oduction test board requirements. measurements taken above and below 2 ghz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system . from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 3. p1db measurements are performed with passive biasing. quiescent drain current, idsq, is set with zero rf drive applied. as p1db is approached, the drain current may increase or point. at lower values of idsq, the device is running close to class b as power output approaches p1db . this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a vds = 2.7v and idsq = 5 ma, id increases to 15 ma as a p1db of +14.5 dbm is approached. figure 21. gain vs. temperature and frequency with bias at 2.7v, 10 ma [1] . frequency (ghz) gain (db) 06 3 15 4 2 30 25 20 15 10 5 -40 c 25 c 85 c figure 22. fmin vs. temperature and frequency with bias at 2.7v, 10 ma [2] . frequency (ghz) fmin (db) 06 3 15 4 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 c 25 c 85 c figure 23. oip3 vs. temperature and frequency with bias at 2.7v, 10 ma [1] . frequency (ghz) oip3 (dbm) 06 3 15 4 2 -40 c 25 c 85 c 25 24 23 22 21 20 19 figure 24. iip3 vs. temperature and frequency with bias at 2.7v, 10 ma [1] . frequency (ghz) iip3 (dbm) 06 3 15 4 2 -40 c 25 c 85 c 20 15 10 5 0 -5 -10 figure 25. p1db vs. temperature and frequency with bias at 2.7v, 10 ma [1] . frequency (ghz) p1db (dbm) 06 3 15 4 2 -40 c 25 c 85 c 16 15 14 13 12 11 10
8 ATF-551M4 typical scattering parameters, v ds = 2v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.0 20.41 10.479 175.9 0.007 86.3 0.803 -3.3 31.75 0.5 0.954 -29.1 19.95 9.946 158.2 0.031 71.6 0.758 -15.6 25.06 0.9 0.906 -50.7 19.35 9.280 144.2 0.052 60.8 0.710 -27.4 22.52 1.0 0.896 -55.7 19.18 9.103 141.0 0.056 58.3 0.692 -30.2 22.11 1.5 0.833 -79.5 18.15 8.080 125.6 0.075 46.8 0.611 -42.3 20.32 1.9 0.790 -96.5 17.22 7.260 114.9 0.085 39.0 0.547 -50.4 19.32 2.0 0.781 -100.4 17.00 7.078 112.5 0.087 37.3 0.532 -52.3 19.10 2.5 0.739 -118.5 15.84 6.197 101.1 0.095 29.8 0.463 -60.6 18.14 3.0 0.710 -134.4 14.74 5.459 91.2 0.099 23.7 0.404 -67.6 17.41 4.0 0.683 -160.0 12.75 4.341 74.5 0.104 14.8 0.318 -79.6 16.21 5.0 0.679 -179.8 11.03 3.559 60.3 0.105 8.6 0.263 -91.2 15.30 6.0 0.680 166.5 9.65 3.036 48.5 0.107 5.0 0.220 -99.5 14.53 7.0 0.681 154.0 8.43 2.638 37.2 0.107 2.1 0.199 -111.0 13.92 8.0 0.683 143.7 7.43 2.353 26.4 0.110 -0.3 0.185 -123.4 13.30 9.0 0.690 132.7 6.53 2.122 15.7 0.113 -2.6 0.181 -137.7 11.27 10.0 0.687 119.7 5.72 1.932 4.5 0.117 -5.4 0.185 -151.1 9.97 11.0 0.691 106.5 4.98 1.775 -6.4 0.122 -8.4 0.196 -163.5 9.14 12.0 0.696 92.6 4.28 1.636 -17.7 0.129 -12.3 0.209 -174.4 8.44 13.0 0.713 81.8 3.53 1.501 -28.6 0.135 -16.2 0.206 171.4 7.80 14.0 0.747 67.4 2.82 1.384 -40.4 0.143 -21.8 0.211 151.2 7.62 15.0 0.759 55.5 1.97 1.255 -51.8 0.149 -27.4 0.237 131.8 6.73 16.0 0.808 45.4 1.00 1.122 -62.4 0.153 -33.3 0.269 113.3 6.90 17.0 0.828 37.3 -0.01 0.999 -72.7 0.157 -39.2 0.322 95.4 6.20 18.0 0.870 30.9 -1.04 0.887 -82.6 0.159 -45.2 0.383 80.1 7.47 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.24 0.62 -4.3 0.14 23.50 0.9 0.24 0.56 8.8 0.13 21.66 1.0 0.28 0.52 13.5 0.12 21.61 1.9 0.45 0.47 38.6 0.11 18.04 2.0 0.39 0.47 42.9 0.11 17.88 2.4 0.47 0.42 52.8 0.11 16.76 3.0 0.55 0.35 74.0 0.09 15.66 3.9 0.61 0.32 105.4 0.08 14.10 5.0 0.74 0.33 144.0 0.06 12.74 5.8 0.89 0.36 164.3 0.05 11.83 6.0 0.90 0.37 166.1 0.05 11.63 7.0 1.03 0.38 -170.9 0.06 10.71 8.0 1.13 0.44 -157.2 0.07 9.99 9.0 1.27 0.48 -142.4 0.09 9.36 10.0 1.53 0.46 -126.0 0.17 8.46 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2v, i ds = 10 ma 40 30 20 10 0 -10 figure 26. msg/mag and |s 21 | 2 vs. frequency at 2v, 10 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
9 ATF-551M4 typical scattering parameters, v ds = 2v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.6 21.93 12.489 175.5 0.006 86.2 0.765 -3.7 33.18 0.5 0.947 -31.6 21.41 11.757 156.7 0.029 70.9 0.715 -17.0 26.08 0.9 0.892 -54.7 20.67 10.804 142.0 0.048 59.7 0.659 -29.6 23.52 1.0 0.880 -60.1 20.46 10.547 138.6 0.052 57.1 0.641 -32.5 23.07 1.5 0.812 -84.9 19.26 9.186 123.0 0.067 46.0 0.555 -45.0 21.37 1.9 0.768 -102.1 18.23 8.153 112.3 0.076 38.7 0.489 -53.1 20.31 2.0 0.758 -106.1 17.98 7.923 109.9 0.077 37.2 0.474 -55.0 20.12 2.5 0.718 -124.1 16.73 6.859 98.9 0.084 30.5 0.407 -63.2 19.12 3.0 0.692 -139.7 15.55 5.991 89.3 0.088 25.3 0.352 -70.2 18.33 4.0 0.671 -164.5 13.47 4.716 73.3 0.092 18.0 0.272 -82.3 17.10 5.0 0.670 176.6 11.70 3.845 59.7 0.095 13.1 0.222 -94.5 16.07 6.0 0.671 163.5 10.30 3.273 48.3 0.098 10.5 0.181 -103.2 15.24 7.0 0.674 151.5 9.06 2.838 37.4 0.101 8.2 0.164 -115.4 14.49 8.0 0.676 141.6 8.06 2.528 27.0 0.105 6.1 0.152 -128.5 12.66 9.0 0.684 130.9 7.14 2.276 16.5 0.111 3.7 0.150 -143.3 11.51 10.0 0.682 118.0 6.33 2.072 5.6 0.117 0.6 0.156 -156.9 10.35 11.0 0.686 105.1 5.59 1.903 -5.0 0.124 -3.1 0.170 -169.0 9.57 12.0 0.691 91.4 4.88 1.753 -16.1 0.132 -7.6 0.183 -179.3 8.87 13.0 0.708 80.9 4.13 1.609 -26.9 0.140 -12.3 0.181 165.9 8.27 14.0 0.744 66.5 3.42 1.483 -38.5 0.148 -18.6 0.188 145.0 8.14 15.0 0.756 54.9 2.59 1.347 -49.7 0.155 -24.9 0.217 125.0 7.23 16.0 0.805 45.0 1.59 1.201 -60.2 0.158 -31.2 0.253 106.8 7.38 17.0 0.825 37.0 0.61 1.073 -70.4 0.161 -37.5 0.310 89.4 6.61 18.0 0.870 30.7 -0.41 0.954 -80.1 0.163 -43.8 0.373 74.9 7.67 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.61 -6.1 0.12 24.12 0.9 0.21 0.55 7.0 0.12 22.18 1.0 0.27 0.50 11.4 0.11 22.12 1.9 0.42 0.46 38.1 0.10 18.61 2.0 0.37 0.43 42.7 0.10 18.52 2.4 0.44 0.39 52.9 0.10 17.34 3.0 0.52 0.32 74.4 0.08 16.21 3.9 0.57 0.28 108.3 0.07 14.65 5.0 0.71 0.30 149.5 0.06 13.27 5.8 0.85 0.35 170.0 0.05 12.38 6.0 0.86 0.35 171.7 0.05 12.19 7.0 0.97 0.38 -165.9 0.06 11.24 8.0 1.08 0.43 -152.1 0.07 10.49 9.0 1.22 0.47 -138.1 0.10 9.84 10.0 1.44 0.46 -122.5 0.17 8.96 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2v, i ds = 15 ma 40 30 20 10 0 -10 figure 27. msg/mag and |s 21 | 2 vs. frequency at 2v, 15 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
10 ATF-551M4 typical scattering parameters, v ds = 2v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.994 -6.9 22.85 13.876 175.3 0.006 85.6 0.740 -3.9 33.64 0.5 0.942 -33.3 22.27 12.985 155.7 0.027 70.4 0.687 -17.8 26.82 0.9 0.882 -57.3 21.44 11.806 140.5 0.045 59.0 0.627 -30.9 24.19 1.0 0.869 -62.8 21.21 11.491 137.1 0.048 56.5 0.608 -33.8 23.79 1.5 0.798 -88.1 19.90 9.881 121.3 0.062 45.7 0.520 -46.4 22.02 1.9 0.753 -105.5 18.79 8.704 110.7 0.070 38.9 0.455 -54.4 20.95 2.0 0.744 -109.5 18.53 8.443 108.4 0.071 37.4 0.441 -56.3 20.75 2.5 0.706 -127.4 17.22 7.262 97.5 0.077 31.3 0.376 -64.3 19.75 3.0 0.681 -142.7 16.01 6.314 88.2 0.081 26.7 0.323 -71.0 18.92 4.0 0.663 -167.0 13.88 4.943 72.5 0.085 20.3 0.248 -82.9 17.65 5.0 0.664 174.6 12.09 4.021 59.3 0.089 16.2 0.201 -95.2 16.55 6.0 0.666 161.9 10.68 3.418 48.1 0.093 14.1 0.162 -103.7 15.65 7.0 0.670 150.1 9.43 2.962 37.3 0.097 12.0 0.144 -116.4 14.85 8.0 0.673 140.4 8.42 2.637 27.1 0.103 10.0 0.133 -130.0 12.78 9.0 0.681 129.8 7.51 2.373 16.8 0.109 7.4 0.131 -145.9 11.65 10.0 0.678 117.1 6.68 2.158 6.0 0.117 3.7 0.139 -160.3 10.56 11.0 0.682 104.3 5.94 1.982 -4.6 0.125 -0.2 0.154 -172.7 9.80 12.0 0.688 90.6 5.23 1.826 -15.6 0.133 -5.2 0.168 176.9 9.11 13.0 0.706 80.3 4.48 1.675 -26.3 0.142 -10.3 0.169 161.6 8.56 14.0 0.743 65.9 3.76 1.542 -38.0 0.150 -17.0 0.182 139.6 8.46 15.0 0.753 54.4 2.92 1.400 -48.9 0.157 -23.6 0.212 121.2 7.48 16.0 0.804 44.7 1.93 1.249 -59.3 0.160 -30.1 0.250 103.8 7.76 17.0 0.824 36.7 0.95 1.116 -69.4 0.163 -36.5 0.306 87.0 6.93 18.0 0.869 30.6 -0.05 0.994 -78.9 0.165 -43.0 0.367 73.0 7.80 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.19 0.59 -7.0 0.11 23.50 0.9 0.20 0.54 6.3 0.11 21.66 1.0 0.25 0.48 10.1 0.10 21.61 1.9 0.41 0.43 38.7 0.09 18.04 2.0 0.36 0.41 43.1 0.09 17.88 2.4 0.43 0.37 53.4 0.09 16.76 3.0 0.51 0.29 76.3 0.08 15.66 3.9 0.58 0.26 112.7 0.07 14.10 5.0 0.70 0.29 154.0 0.05 12.74 5.8 0.85 0.34 173.6 0.05 11.83 6.0 0.86 0.35 175.9 0.05 11.63 7.0 0.94 0.37 -162.3 0.06 10.71 8.0 1.07 0.42 -148.2 0.08 9.99 9.0 1.20 0.48 -135.2 0.10 9.36 10.0 1.43 0.46 -119.5 0.17 8.46 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2v, i ds = 20 ma 40 30 20 10 0 -10 figure 28. msg/mag and |s 21 | 2 vs. frequency at 2v, 20 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
11 ATF-551M4 typical scattering parameters, v ds = 2.7v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -5.9 20.55 10.656 175.9 0.006 86.3 0.825 -3.0 32.49 0.5 0.955 -28.7 20.11 10.129 158.4 0.028 72.0 0.782 -14.0 25.58 0.9 0.907 -50.0 19.52 9.466 144.6 0.046 61.3 0.735 -24.5 23.13 1.0 0.896 -55.0 19.36 9.292 141.4 0.050 58.8 0.717 -27.0 22.69 1.5 0.833 -78.6 18.34 8.265 126.1 0.067 47.6 0.639 -37.6 20.91 1.9 0.789 -95.5 17.43 7.439 115.4 0.076 40.0 0.577 -44.6 19.91 2.0 0.779 -99.4 17.21 7.255 113.0 0.078 38.4 0.562 -46.2 19.69 2.5 0.737 -117.4 16.07 6.361 101.7 0.085 31.0 0.495 -53.1 18.74 3.0 0.707 -133.4 14.98 5.610 91.8 0.089 25.1 0.439 -58.8 18.00 4.0 0.679 -159.1 13.01 4.471 75.0 0.093 16.6 0.357 -68.3 16.82 5.0 0.674 -178.9 11.30 3.673 60.8 0.094 10.9 0.303 -77.6 15.92 6.0 0.675 167.3 9.93 3.136 49.1 0.095 8.1 0.264 -83.7 15.19 7.0 0.676 154.9 8.72 2.728 37.7 0.096 5.9 0.244 -93.5 14.54 8.0 0.679 144.5 7.73 2.435 27.0 0.099 4.3 0.230 -104.1 12.94 9.0 0.686 133.5 6.84 2.198 16.2 0.102 2.9 0.222 -116.6 11.58 10.0 0.684 120.8 6.03 2.002 5.1 0.107 0.7 0.222 -129.0 10.44 11.0 0.688 107.5 5.30 1.841 -5.9 0.113 -1.7 0.230 -140.8 9.69 12.0 0.693 93.7 4.59 1.696 -17.2 0.121 -5.2 0.239 -151.9 9.02 13.0 0.710 82.7 3.86 1.559 -28.2 0.129 -8.9 0.232 -164.6 8.47 14.0 0.743 68.6 3.19 1.443 -39.8 0.139 -14.3 0.222 176.6 8.42 15.0 0.760 56.5 2.37 1.314 -51.5 0.147 -20.2 0.232 155.6 7.69 16.0 0.805 46.2 1.42 1.177 -62.2 0.153 -26.2 0.251 134.3 8.26 17.0 0.830 38.1 0.43 1.051 -72.8 0.158 -32.5 0.293 112.0 8.07 18.0 0.872 31.5 -0.58 0.935 -83.1 0.163 -39.1 0.353 92.7 7.59 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.26 0.64 -4.4 0.14 23.79 0.9 0.27 0.57 7.5 0.13 21.80 1.0 0.30 0.54 11.1 0.13 21.60 1.9 0.46 0.49 36.6 0.11 18.06 2.0 0.41 0.48 40.4 0.12 17.92 2.4 0.47 0.44 50.3 0.11 16.79 3.0 0.55 0.36 69.5 0.10 15.70 3.9 0.61 0.32 101.3 0.08 14.24 5.0 0.74 0.32 139.5 0.06 12.86 5.8 0.88 0.35 161.5 0.05 12.01 6.0 0.90 0.35 163.9 0.05 11.82 7.0 1.00 0.37 -173.6 0.06 10.93 8.0 1.12 0.41 -158.2 0.07 10.24 9.0 1.25 0.46 -143.0 0.09 9.66 10.0 1.46 0.46 -127.2 0.15 8.85 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2.7v, i ds = 10 ma 40 30 20 10 0 -10 figure 29. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 10 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
12 ATF-551M4 typical scattering parameters, v ds = 2.7v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.5 21.98 12.559 175.6 0.006 86.4 0.793 -3.2 33.21 0.5 0.949 -31.2 21.47 11.839 156.9 0.026 71.0 0.745 -15.2 26.58 0.9 0.894 -54.0 20.75 10.905 142.3 0.043 60.1 0.691 -26.4 24.04 1.0 0.882 -59.4 20.55 10.650 138.9 0.047 57.5 0.673 -28.9 23.55 1.5 0.814 -84.0 19.37 9.298 123.4 0.061 46.6 0.589 -39.7 21.83 1.9 0.768 -101.1 18.34 8.265 112.7 0.068 39.5 0.526 -46.6 20.85 2.0 0.758 -105.1 18.10 8.034 110.3 0.070 38.0 0.511 -48.1 20.60 2.5 0.718 -123.1 16.86 6.966 99.3 0.076 31.4 0.447 -54.6 19.62 3.0 0.691 -138.7 15.70 6.095 89.7 0.079 26.3 0.393 -59.9 18.87 4.0 0.668 -163.5 13.64 4.806 73.6 0.083 19.4 0.318 -68.8 17.63 5.0 0.667 177.5 11.88 3.928 59.9 0.085 15.0 0.268 -77.7 16.65 6.0 0.668 164.3 10.49 3.345 48.5 0.088 13.1 0.230 -83.3 15.80 7.0 0.671 152.2 9.26 2.904 37.5 0.091 11.4 0.212 -93.0 15.04 8.0 0.673 142.3 8.27 2.591 27.0 0.095 10.0 0.198 -103.4 12.89 9.0 0.682 131.6 7.37 2.335 16.4 0.101 8.4 0.190 -116.2 11.88 10.0 0.677 118.5 6.56 2.128 5.4 0.107 5.6 0.190 -129.6 10.70 11.0 0.684 105.8 5.83 1.956 -5.3 0.115 2.6 0.198 -142.6 10.06 12.0 0.690 91.7 5.12 1.804 -16.7 0.124 -1.7 0.210 -154.2 9.46 13.0 0.707 81.2 4.38 1.656 -27.5 0.133 -6.1 0.205 -167.8 8.93 14.0 0.744 66.4 3.68 1.528 -39.4 0.143 -12.3 0.200 172.5 9.10 15.0 0.750 55.1 2.85 1.389 -50.6 0.151 -18.7 0.212 150.9 7.85 16.0 0.806 45.2 1.88 1.242 -61.2 0.156 -25.1 0.236 129.7 9.01 17.0 0.824 37.1 0.92 1.112 -71.5 0.162 -31.6 0.282 107.9 8.37 18.0 0.872 31.0 -0.08 0.991 -81.5 0.166 -38.2 0.337 89.7 7.76 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.18 0.61 -6.0 0.12 24.49 0.9 0.18 0.56 6.8 0.12 22.38 1.0 0.24 0.5 10.7 0.11 22.32 1.9 0.38 0.45 36.9 0.1 18.78 2.0 0.33 0.43 41.9 0.1 18.65 2.4 0.42 0.39 50.9 0.1 17.47 3.0 0.5 0.31 73.0 0.08 16.37 3.9 0.55 0.28 107.0 0.07 14.83 5.0 0.66 0.29 146.6 0.06 13.4 5.8 0.83 0.33 168.7 0.05 12.54 6.0 0.84 0.34 170.7 0.05 12.36 7.0 0.95 0.36 -166.9 0.06 11.44 8.0 1.06 0.41 -152.3 0.07 10.69 9.0 1.18 0.46 -138.1 0.1 10.12 10.0 1.43 0.44 -122.5 0.16 9.21 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2.7v, i ds = 15 ma 40 30 20 10 0 -10 figure 30. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 15 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
13 ATF-551M4 typical scattering parameters, v ds = 2.7v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.8 22.92 13.988 175.4 0.005 86.4 0.772 -3.4 34.47 0.5 0.943 -33.0 22.35 13.103 155.9 0.024 70.6 0.72 -15.7 27.37 0.9 0.883 -56.9 21.53 11.932 140.7 0.04 59.4 0.662 -27.1 24.75 1.0 0.87 -62.4 21.30 11.616 137.3 0.043 56.9 0.643 -29.6 24.32 1.5 0.798 -87.6 20.00 10.004 121.6 0.056 46.2 0.557 -40.2 22.52 1.9 0.752 -104.9 18.91 8.822 111.0 0.063 39.6 0.494 -46.7 21.46 2.0 0.743 -108.8 18.65 8.557 108.6 0.064 38.2 0.48 -48.1 21.26 2.5 0.704 -126.7 17.35 7.367 97.8 0.069 32.3 0.417 -54.2 20.28 3.0 0.68 -142.1 16.14 6.411 88.4 0.072 27.8 0.367 -59.0 19.50 4.0 0.66 -166.3 14.02 5.026 72.8 0.076 22.0 0.297 -67.2 18.20 5.0 0.662 175.2 12.25 4.095 59.5 0.079 18.6 0.251 -75.7 17.15 6.0 0.664 162.6 10.84 3.483 48.4 0.083 17.4 0.216 -80.7 16.23 7.0 0.667 150.9 9.61 3.022 37.6 0.087 16.1 0.199 -90.4 14.69 8.0 0.67 141.2 8.61 2.695 27.3 0.093 14.8 0.185 -100.6 13.08 9.0 0.679 130.8 7.71 2.429 16.9 0.099 13.0 0.177 -113.5 12.08 10.0 0.677 118.1 6.90 2.213 6.0 0.107 9.9 0.178 -127.2 11.08 11.0 0.683 105.4 6.17 2.034 -4.6 0.116 6.4 0.186 -140.4 10.44 12.0 0.688 91.4 5.46 1.876 -15.8 0.126 1.8 0.198 -152.2 9.85 13.0 0.705 80.9 4.72 1.722 -26.5 0.136 -3.2 0.193 -165.9 9.37 14.0 0.741 66.5 4.03 1.59 -38.3 0.146 -9.8 0.188 173.7 9.78 15.0 0.75 55.0 3.19 1.444 -49.5 0.154 -16.5 0.2 151.1 8.35 16.0 0.803 45.1 2.22 1.291 -60.1 0.159 -23.2 0.224 129.5 9.10 17.0 0.823 37.2 1.26 1.156 -70.3 0.165 -29.8 0.269 107.3 8.45 18.0 0.872 31.0 0.27 1.032 -80.2 0.168 -36.6 0.325 88.8 7.88 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.18 0.61 -6.7 0.12 24.89 0.9 0.18 0.55 5.9 0.11 22.72 1.0 0.23 0.49 9.9 0.10 22.68 1.9 0.39 0.43 37.8 0.09 19.18 2.0 0.36 0.42 41.6 0.09 18.98 2.4 0.43 0.37 51.7 0.09 17.83 3.0 0.51 0.29 73.6 0.08 16.69 3.9 0.56 0.26 110.7 0.07 15.19 5.0 0.68 0.28 152.8 0.05 13.79 5.8 0.83 0.33 172.9 0.05 12.91 6.0 0.85 0.33 175.6 0.05 12.73 7.0 0.95 0.37 -162.4 0.06 11.80 8.0 1.06 0.41 -148.8 0.08 11.06 9.0 1.19 0.47 -135.5 0.10 10.47 10.0 1.41 0.46 -119.2 0.17 9.59 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 2.7v, i ds = 20 ma 40 30 20 10 0 -10 figure 31. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 20 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
14 ATF-551M4 typical scattering parameters, v ds = 3v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.996 -5.9 20.49 10.578 176.0 0.006 86.1 0.835 -2.8 32.46 0.5 0.957 -28.4 20.05 10.059 158.5 0.027 72.0 0.792 -13.4 25.71 0.9 0.909 -49.6 19.48 9.420 144.8 0.045 61.5 0.747 -23.5 23.21 1.0 0.899 -54.6 19.32 9.246 141.6 0.049 59.1 0.730 -25.9 22.76 1.5 0.836 -78.1 18.32 8.241 126.3 0.065 47.9 0.653 -36.1 21.03 1.9 0.792 -94.9 17.41 7.424 115.7 0.074 40.3 0.593 -42.7 20.01 2.0 0.782 -98.8 17.20 7.241 113.2 0.075 38.6 0.578 -44.2 19.85 2.5 0.740 -116.8 16.07 6.360 101.9 0.082 31.3 0.513 -50.7 18.90 3.0 0.709 -132.8 14.99 5.616 91.9 0.086 25.3 0.458 -56.0 18.15 4.0 0.680 -158.5 13.03 4.481 75.1 0.090 16.9 0.378 -64.9 16.97 5.0 0.675 -178.4 11.33 3.684 60.9 0.091 11.3 0.325 -73.5 16.07 6.0 0.675 167.8 9.96 3.146 49.1 0.092 8.7 0.287 -79.1 15.34 7.0 0.676 155.1 8.75 2.738 37.6 0.093 6.6 0.267 -88.4 14.69 8.0 0.678 144.9 7.77 2.447 26.8 0.095 5.4 0.252 -98.6 12.90 9.0 0.686 133.8 6.88 2.209 16.0 0.099 4.1 0.242 -110.5 11.73 10.0 0.682 120.5 6.09 2.015 4.7 0.104 2.1 0.241 -122.9 10.56 11.0 0.688 107.5 5.37 1.855 -6.3 0.110 0.0 0.247 -135.1 9.88 12.0 0.694 93.3 4.67 1.711 -17.8 0.118 -3.4 0.256 -146.5 9.26 13.0 0.711 82.4 3.92 1.571 -28.8 0.127 -6.9 0.250 -159.0 8.76 14.0 0.746 67.5 3.24 1.452 -40.8 0.137 -12.6 0.240 -176.5 8.90 15.0 0.753 55.9 2.41 1.320 -52.4 0.146 -18.5 0.246 163.0 7.74 16.0 0.807 45.8 1.46 1.183 -63.1 0.152 -24.5 0.260 142.0 8.91 17.0 0.826 37.6 0.48 1.057 -73.7 0.159 -30.8 0.297 119.0 8.23 18.0 0.874 31.3 -0.53 0.941 -84.1 0.164 -37.5 0.349 98.9 7.59 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.23 0.65 -4.3 0.14 23.81 0.9 0.24 0.58 7.4 0.13 21.82 1.0 0.26 0.54 10.7 0.13 21.62 1.9 0.43 0.50 36.2 0.11 18.05 2.0 0.38 0.48 40.4 0.12 17.96 2.4 0.43 0.44 49.8 0.11 16.84 3.0 0.51 0.36 69.2 0.10 15.76 3.9 0.59 0.31 99.4 0.08 14.23 5.0 0.70 0.32 139.3 0.06 12.94 5.8 0.85 0.35 160.3 0.05 12.04 6.0 0.86 0.35 162.3 0.05 11.85 7.0 0.98 0.36 -173.7 0.06 10.99 8.0 1.09 0.41 -158.6 0.07 10.29 9.0 1.23 0.45 -143.7 0.09 9.71 10.0 1.45 0.44 -126.8 0.15 8.88 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 3v, i ds = 10 ma 40 30 20 10 0 -10 figure 32. msg/mag and |s 21 | 2 vs. frequency at 3v, 10 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
15 ATF-551M4 typical scattering parameters, v ds = 3v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.5 22.02 12.623 175.6 0.005 86.0 0.802 -3.1 34.02 0.5 0.949 -31.2 21.51 11.900 156.9 0.025 71.0 0.754 -14.6 26.78 0.9 0.894 -54.1 20.79 10.958 142.3 0.041 60.1 0.700 -25.4 24.27 1.0 0.882 -59.4 20.59 10.701 138.9 0.045 57.6 0.682 -27.8 23.76 1.5 0.813 -84.0 19.41 9.341 123.3 0.059 46.7 0.599 -38.1 22.00 1.9 0.768 -101.2 18.38 8.301 112.7 0.066 39.7 0.537 -44.5 21.00 2.0 0.758 -105.1 18.14 8.068 110.3 0.067 38.1 0.522 -45.9 20.81 2.5 0.717 -123.1 16.90 6.996 99.2 0.073 31.6 0.459 -52.0 19.82 3.0 0.690 -138.7 15.74 6.120 89.7 0.076 26.7 0.407 -56.9 19.06 4.0 0.668 -163.5 13.68 4.829 73.6 0.080 20.0 0.334 -65.0 17.81 5.0 0.666 177.5 11.93 3.947 59.9 0.082 15.8 0.286 -73.3 16.82 6.0 0.668 164.4 10.53 3.363 48.5 0.084 14.2 0.250 -78.4 16.02 7.0 0.670 152.3 9.31 2.921 37.5 0.087 12.9 0.232 -87.6 14.96 8.0 0.672 142.4 8.32 2.607 27.0 0.092 11.8 0.218 -97.7 12.99 9.0 0.681 131.7 7.43 2.351 16.4 0.098 10.4 0.209 -110.0 12.01 10.0 0.678 118.6 6.62 2.142 5.3 0.104 7.8 0.209 -122.9 10.90 11.0 0.684 105.8 5.89 1.970 -5.5 0.113 4.9 0.215 -135.4 10.28 12.0 0.690 91.8 5.19 1.817 -16.8 0.122 0.7 0.226 -147.1 9.70 13.0 0.707 81.3 4.44 1.667 -27.6 0.132 -3.7 0.221 -160.3 9.23 14.0 0.744 66.6 3.75 1.540 -39.5 0.142 -10.0 0.211 -179.5 9.62 15.0 0.751 55.2 2.93 1.401 -50.7 0.151 -16.4 0.218 159.7 8.26 16.0 0.807 45.3 1.97 1.254 -61.4 0.157 -22.8 0.236 137.8 9.02 17.0 0.824 37.3 1.01 1.123 -71.9 0.163 -29.5 0.277 114.5 8.38 18.0 0.874 31.1 0.02 1.002 -82.0 0.167 -36.2 0.330 95.0 7.78 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.18 0.63 -6.3 0.12 24.41 0.9 0.19 0.56 6.8 0.12 22.45 1.0 0.23 0.51 10.0 0.11 22.29 1.9 0.39 0.46 36.5 0.10 18.75 2.0 0.35 0.44 40.8 0.10 18.61 2.4 0.42 0.39 50.1 0.10 17.46 3.0 0.49 0.31 72.5 0.08 16.42 3.9 0.56 0.27 104.4 0.07 14.80 5.0 0.66 0.29 146.9 0.06 13.48 5.8 0.83 0.33 167.4 0.05 12.58 6.0 0.84 0.33 169.0 0.05 12.38 7.0 0.94 0.35 -166.9 0.06 11.49 8.0 1.05 0.40 -152.7 0.07 10.77 9.0 1.19 0.46 -138.6 0.09 10.23 10.0 1.40 0.44 -121.9 0.16 9.32 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 3v, i ds = 15 ma 40 30 20 10 0 -10 figure 33. msg/mag and |s 21 | 2 vs. frequency at 3v, 15 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
16 ATF-551M4 typical scattering parameters, v ds = 3v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.995 -6.8 22.91 13.987 175.4 0.005 86.1 0.781 -3.3 34.47 0.5 0.943 -33.0 22.35 13.101 155.8 0.024 70.5 0.730 -15.2 27.37 0.9 0.883 -56.9 21.53 11.932 140.7 0.039 59.5 0.672 -26.1 24.86 1.0 0.870 -62.4 21.30 11.614 137.2 0.042 56.9 0.654 -28.5 24.42 1.5 0.798 -87.6 20.00 10.004 121.5 0.054 46.3 0.569 -38.5 22.68 1.9 0.752 -104.9 18.91 8.820 111.0 0.061 39.7 0.506 -44.6 21.60 2.0 0.743 -108.9 18.64 8.555 108.6 0.062 38.3 0.493 -46.0 21.40 2.5 0.704 -126.7 17.35 7.368 97.7 0.067 32.4 0.431 -51.6 20.41 3.0 0.679 -142.1 16.14 6.412 88.4 0.070 28.1 0.383 -56.0 19.62 4.0 0.660 -166.3 14.03 5.028 72.7 0.074 22.5 0.314 -63.5 18.32 5.0 0.662 175.3 12.25 4.099 59.4 0.076 19.2 0.270 -71.5 17.32 6.0 0.664 162.6 10.85 3.488 48.3 0.080 18.3 0.237 -76.2 16.39 7.0 0.667 150.9 9.62 3.027 37.5 0.084 17.2 0.220 -85.2 14.66 8.0 0.670 141.3 8.63 2.701 27.2 0.090 16.3 0.207 -95.2 13.18 9.0 0.679 130.9 7.73 2.435 16.8 0.096 14.6 0.198 -107.6 12.20 10.0 0.677 118.1 6.92 2.219 5.9 0.104 11.7 0.198 -120.6 11.21 11.0 0.683 105.4 6.19 2.040 -4.8 0.114 8.4 0.205 -133.4 10.64 12.0 0.689 91.4 5.49 1.881 -16.0 0.124 3.8 0.216 -145.2 10.10 13.0 0.705 80.9 4.75 1.727 -26.8 0.134 -1.0 0.210 -158.4 9.62 14.0 0.742 66.4 4.05 1.594 -38.6 0.145 -7.7 0.199 -178.0 10.41 15.0 0.751 55.0 3.23 1.451 -49.8 0.153 -14.4 0.207 160.3 8.80 16.0 0.806 45.1 2.27 1.298 -60.4 0.159 -21.1 0.225 138.1 9.12 17.0 0.826 37.2 1.32 1.164 -70.8 0.165 -27.9 0.265 114.0 8.48 18.0 0.874 31.1 0.33 1.039 -80.8 0.170 -34.9 0.320 94.1 7.86 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.17 0.62 -6.2 0.12 24.92 0.9 0.18 0.55 6.0 0.11 22.79 1.0 0.24 0.50 9.5 0.10 22.59 1.9 0.39 0.43 37.5 0.10 19.22 2.0 0.36 0.41 41.2 0.09 19.00 2.4 0.42 0.37 50.9 0.09 17.83 3.0 0.50 0.29 73.6 0.08 16.72 3.9 0.57 0.25 109.4 0.07 15.18 5.0 0.68 0.28 151.6 0.06 13.80 5.8 0.83 0.32 172.5 0.05 12.93 6.0 0.85 0.33 175.6 0.05 12.77 7.0 0.93 0.36 -162.7 0.06 11.84 8.0 1.05 0.41 -149.1 0.08 11.09 9.0 1.19 0.46 -135.5 0.10 10.53 10.0 1.39 0.45 -119.4 0.17 9.64 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 3v, i ds = 20 ma 40 30 20 10 0 -10 figure 34. msg/mag and |s 21 | 2 vs. frequency at 3v, 20 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag mag msg msg msg
17 ATF-551M4 typical scattering parameters, v ds = 3v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.994 -7.4 23.90 15.662 175.0 0.005 86.1 0.760 -3.4 34.96 0.5 0.936 -35.3 23.25 14.544 154.5 0.022 69.8 0.705 -15.4 28.20 0.9 0.870 -60.4 22.32 13.058 138.7 0.035 58.7 0.644 -26.2 25.72 1.0 0.856 -66.1 22.05 12.665 135.2 0.038 56.2 0.624 -28.5 25.23 1.5 0.781 -92.0 20.61 10.732 119.4 0.048 46.0 0.539 -37.7 23.49 1.9 0.736 -109.4 19.44 9.374 108.9 0.054 40.1 0.480 -43.1 22.40 2.0 0.726 -113.3 19.15 9.072 106.6 0.055 38.8 0.467 -44.2 22.17 2.5 0.690 -131.0 17.79 7.753 96.0 0.059 33.7 0.410 -49.0 21.19 3.0 0.668 -146.1 16.54 6.713 86.9 0.062 30.3 0.367 -52.7 20.35 4.0 0.653 -169.6 14.38 5.234 71.7 0.066 26.1 0.307 -59.2 18.99 5.0 0.656 172.7 12.58 4.258 58.7 0.069 23.8 0.268 -66.7 17.90 6.0 0.659 160.5 11.17 3.618 47.9 0.074 23.6 0.238 -70.9 16.89 7.0 0.663 149.0 9.93 3.138 37.2 0.079 22.9 0.224 -79.8 14.61 8.0 0.666 139.6 8.94 2.798 27.1 0.086 21.9 0.211 -89.5 13.35 9.0 0.676 129.3 8.03 2.522 16.8 0.094 20.1 0.203 -101.5 12.55 10.0 0.674 116.6 7.22 2.296 5.9 0.103 16.9 0.202 -114.5 11.58 11.0 0.680 104.1 6.48 2.109 -4.6 0.113 13.1 0.208 -127.3 11.01 12.0 0.688 90.3 5.77 1.944 -15.8 0.124 8.0 0.219 -139.4 10.62 13.0 0.705 80.1 5.03 1.784 -26.4 0.135 3.0 0.213 -152.3 10.38 14.0 0.743 65.8 4.34 1.648 -38.0 0.147 -4.1 0.200 -170.8 10.50 15.0 0.751 54.5 3.53 1.502 -49.2 0.156 -11.1 0.203 166.8 9.84 16.0 0.806 44.9 2.56 1.343 -59.8 0.162 -18.1 0.218 143.9 9.19 17.0 0.826 37.0 1.64 1.208 -70.1 0.168 -25.2 0.254 118.4 8.57 18.0 0.875 31.0 0.67 1.080 -80.2 0.174 -32.4 0.306 97.4 7.93 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.16 0.60 -6.2 0.11 25.60 0.9 0.18 0.55 6.4 0.11 23.17 1.0 0.24 0.47 10.1 0.10 23.19 1.9 0.39 0.39 39.1 0.09 19.73 2.0 0.36 0.38 42.7 0.09 19.48 2.4 0.45 0.33 54.2 0.09 18.36 3.0 0.52 0.26 79.0 0.08 17.20 3.9 0.59 0.23 119.0 0.06 15.66 5.0 0.71 0.28 162.1 0.05 14.28 5.8 0.86 0.33 -179.3 0.05 13.39 6.0 0.89 0.33 -176.7 0.05 13.20 7.0 0.99 0.37 -156.1 0.07 12.27 8.0 1.12 0.42 -143.5 0.09 11.50 9.0 1.26 0.48 -130.8 0.12 10.96 10.0 1.50 0.46 -115.1 0.20 10.01 notes: 1. the fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test syst em. from these measurements fmin is calculated. refer to the noise parameter measurement section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. the input referen ce plane is at the end of the gate pad. the output reference plane is at the end of the drain pad. typical noise parameters, v ds = 3v, i ds = 30 ma 40 30 20 10 0 -10 figure 35. msg/mag and |s 21 | 2 vs. frequency at 3v, 30 ma. frequency (ghz) 020 10 515 msg/mag and |s 21 | 2 (db) |s 21 | 2 mag msg msg
18 s and noise parameter measurements the position of the reference planes used for the measurement of both s and noise parameter measurements is shown in figure 36. the reference plane can be described as being at the center of both the gate and drain pads. s and noise parameters are measured with a 50 ohm microstrip test fixture made with a 0.010" thickness aluminum substrate. both source pads are connected directly to ground via a 0.010" thickness metal rib which provides a very low inductance path to ground for both source pads. the inductance associated with the addition of printed circuit board plated through holes and source bypass capacitors must be added to the computer circuit simulation to properly model the effect of grounding the source leads in a typical amplifier design. gate pin 2 source pin 3 drain pin 4 source pin 1 reference plane microstrip transmission lines vx figure 36. position of the reference planes. noise parameter applications information the fmin values are based on a set of 16 noise figure measure- ments made at 16 different impedances using an atn np5 test system. from these measure- ments, a true fmin is calculated. fmin represents the true mini- mum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50 ? , to an impedance represented by the reflection coefficient o . the designer must design a matching network that will present o to the device with minimal associ- ated circuit losses. the noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. the noise figure of the device is equal to fmin only when the device is presented with o . if the reflection coeffi- cient of the matching network is other than o , then the noise figure of the device will be greater than fmin based on the following equation. nf = f min + 4 r n | s C o | 2 zo (|1 + o | 2 )(1 - | s | 2 ) where rn/zo is the normalized noise resistance, o is the opti- mum reflection coefficient required to produce fmin and s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. the losses of the matching networks are related to the q of the compo- nents and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower o as compared to nar- rower gate width devices. typi- cally for fets , the higher o usually infers that an impedance much higher than 50 ? is re- quired for the device to produce fmin. at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. matching to such a high impedance requires very hi-q components in order to minimize circuit losses. as an example at 900 mhz, when air wound coils (q>100)are used for matching networks, the loss can still be up to 0.25 db which will add di- rectly to the noise figure of the device. using muiltilayer molded inductors with qs in the 30 to 50 range results in additional loss over the air wound coil. losses as high as 0.5 db or greater add to the typical 0.15 db fmin of the device creating an amplifier noise figure of nearly 0.65 db. smt assembly the package can be soldered using either lead-bearing or lead- free alloys (higher peak tempera- tures). reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g. ir or vapor phase reflow, wave solder- ing, etc) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and ther- mal mass of components. compo- nents with a low mass, such as the minipak 1412 package, will reach solder reflow temperatures faster than those with a greater mass. the recommended leaded solder time-temperature profile is shown in figure 37. this profile is representative of an ir reflow type of surface mount assembly process. after ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. the preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. the reflow zone
19 briefly elevates the temperature sufficiently to produce a reflow of the solder. the rates of change of tempera- ture for the ramp-up and cool- down zones are chosen to be low enough to not cause deformation of board or damage to compo- nents due to thermal shock. the maximum temperature in the reflow zone (tmax) should not exceed 235 c for leaded solder. these parameters are typical for a surface mount assembly process for the ATF-551M4. as a general guideline, the circuit board and components should only be exposed to the minimum temperatures and times the necessary to achieve a uniform reflow of solder. the recommended lead-free reflow profile is shown in fig- ure 38. electrostatic sensitivity fets and rfics are electrostatic discharge (esd) sensitive de- vices. agilent devices are manu- factured using a very robust and reliable phemt process, however, permanent damage may occur to these devices if they are sub- jected to high-energy electrostatic discharges. electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equip- ment) can discharge without detection and may result in failure or degradation in perfor- mance and reliability. time (seconds) t max temperature ( c) 0 0 50 100 150 200 250 60 preheat zone cool down zone reflow zone 120 180 240 300 figure 38. lead-free solder reflow profile. figure 37. leaded solder reflow profile. electronic devices may be subjected to esd damage in any of the following areas: ? storage & handling ? inspection ? assembly & testing ? in-circuit use the ATF-551M4 is an esd class 1 device. therefore, proper esd precautions are recommended when handling, inspecting, testing, and assembling these devices to avoid damage. any user-accessible points in wireless equipment (e.g. antenna or battery terminals) provide an opportunity for esd damage. for circuit applications in which the ATF-551M4 is used as an input or output stage with close coupling to an external antenna, the device should be protected from high voltage spikes due to human contact with the antenna. a good practice, illustrated in figure 39, is to place a shunt inductor or rf choke at the antenna connection to protect the receiver and transmitter circuits. it is often advantageous to integrate the rf choke into the design of the diplexer or t/r switch control circuitry. figure 39. in-circuit esd protection. time (seconds) peak temperature min. 240 c max. 255 c temperature ( c) 0 0 50 150 100 221 200 250 300 350 60 90 30 120 150 210 180 270 300 330 240 360 preheat 130 170 c min. 60s max. 150s reflow time min. 60s max. 90s
20 ATF-551M4 applications information introduction agilent technologiess ATF-551M4 is a low noise enhancement mode phemt designed for use in low cost commercial applications in the vhf through 10 ghz frequency range. as opposed to a typical depletion mode phemt where the gate must be made negative with respect to the source for proper operation, an enhancement mode phemt requires that the gate be made more positive than the source for normal operation. therefore a negative power supply voltage is not required for an enhancement mode device. biasing an enhancement mode phemt is much like biasing the typical bipolar junction transistor. instead of a 0.7v base to emitter voltage, the ATF-551M4 enhance- ment mode phemt requires a nominal 0.47v potential between the gate and source for a nominal drain current of 10 ma. matching networks the techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. the only difference is in the method of supplying gate bias. s and noise parameters for various bias conditions are listed in this data sheet. the circuit shown in figure 1 shows a typical lna circuit normally used for 900 and 1900 mhz applications. consult the agilent technologies web site for application notes covering specific designs and applications. high pass impedance matching networks consisting of l1/c1 and l4/c4 provide the appropriate match for noise figure, gain, s11 and s22. the high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection. capacitors c2 and c5 provide a low impedance in-band rf bypass for the matching net- works. resistors r3 and r4 provide a very important low frequency termination for the device. the resistive termination improves low frequency stability. capacitors c3 and c6 provide the rf bypass for resistors r3 and r4. their value should be chosen carefully as c3 and c6 also provide a termination for low frequency mixing products. these mixing products are as a result of two or more in-band signals mixing and producing third order in-band distortion products. the low frequency or difference mixing products are terminated by c3 and c6. for best suppression of third order distortion products based on the cdma 1.25 mhz signal spacing, c3 and c6 should be 0.1 uf in value. smaller values of capaci- tance will not suppress the generation of the 1.25 mhz difference signal and as a result will show up as poorer two tone ip3 results. input c1 c2 c3 l1 r4 r1 r2 vdd r3 l2 l3 l4 q1 zo zo c4 c5 c6 output r5 figure 1. typical ATF-551M4 lna with passive biasing. bias networks one of the major advantages of the enhancement mode technol- ogy is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current id. whereas a depletion mode phemt pulls maximum drain current when v gs = 0v, an en- hancement mode phemt pulls only a small amount of leakage current when v gs = 0v. only when v gs is increased above v th , the device threshold voltage, will drain current start to flow. at a v ds of 2.7v and a nominal v gs of 0.47v, the drain current i d will be approximately 10 ma. the data sheet suggests a minimum and maximum v gs over which the desired amount of drain current will be achieved. it is also impor- tant to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differ- ential between the gate and source terminals. passive biasing passive biasing of the ATF-551M4 is accomplished by the use of a voltage divider consisting of r1 and r2. the voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of r3 to help keep drain current constant. in the case of a typical depletion mode fet, the voltage divider which is normally con- nected to a negative voltage source is connected to the gate through resistor r4. additional resistance in the form of r5 (approximately 10k ? ) is added to provide current limiting for the gate of enhancement mode devices such as the ATF-551M4. this is especially important when the device is driven to p1db or psat. resistor r3 is calculated based on desired v ds , i ds and available power supply voltage.
21 r3 = v dd C v ds (1) p i ds + i bb v dd is the power supply voltage. v ds is the device drain to source voltage. i ds is the desired drain current. i bb is the current flowing through the r1/r2 resistor voltage divider network. the value of resistors r1 and r2 are calculated with the following formulas. r1 = v gs (2) p i bb r2 = (v ds C v gs ) r1 (3) p v gs example circuit v dd = 3v v ds = 2.7v i ds = 10 ma v gs = 0.47v choose i bb to be at least 10x the maximum expected gate leakage current. i bb was conservatively chosen to be 0.5 ma for this example. using equations (1), (2), and (3) the resistors are calcu- lated as follows r1 = 940 ? r2 = 4460 ? r3 = 28.6 ? active biasing active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc perfor- mance. the advantage of the active biasing of an enhancement mode phemt versus a depletion mode phemt is that a negative power source is not required. the techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. an active bias scheme is shown in figure 2. input c1 c2 c3 c7 l1 r5 r6 r7 r3 r2 r1 q2 vdd r4 l2 l3 l4 q1 zo zo c4 c5 c6 output figure 2. typical ATF-551M4 lna with active biasing. r1 and r2 provide a constant voltage source at the base of a pnp transistor at q2. the con- stant voltage at the base of q2 is raised by 0.7 volts at the emitter. the constant emitter voltage plus the regulated v dd supply are present across resistor r3. constant voltage across r3 provides a constant current supply for the drain current. resistors r1 and r2 are used to set the desired v ds . the combined series value of these resistors also sets the amount of extra current consumed by the bias network. the equations that describe the circuits operation are as follows. v e = v ds + (i ds ? r4) (1) r3 = v dd C v e (2) p i ds v b = v e C v be (3) v b = r1 v dd (4) p r1 + r2 v dd = i bb (r1 + r2) (5) rearranging equation (4) provides the following formula r2 = r 1 (v dd C v b ) (4a) p v b and rearranging equation (5) provides the follow formula r1 = v dd (5a) 9 i bb ( 1 + v dd C v b ) p v b example circuit v dd = 3 v v ds = 2.7 v i ds = 10 ma r4 = 10 ? v be = 0.7 v equation (1) calculates the required voltage at the emitter o the pnp transistor based o desired v ds and i ds throug resistor r4 to be 2.8v. equation (2) calculates the value of resistor r3 which determines the drain current i ds . in the example r3=18.2 ? . equation (3) calculates the voltage required at the junc- tion of resistors r1 and r2. this voltage plus the step-up of the base emitter junction determines the regulated v ds . equations (4) and (5) are solved simultaneously to determine the value of resistors r1 and r2. in the example r1=4200 ? and r2 =1800 ? . r7 is chosen to be 1 k ? . this resistor keeps a small amount of current flowing through q2 to help maintain bias stability. r6 is chosen to be 10 k ? . this value of resistance is high enough to limit q1 gate current in the presence of high rf drive levels as experi- enced when q1 is driven to the p1db gain compression point. c7 provides a low frequency bypass to keep noise from q2 effecting the operation of q1. c7 is typically 0.1 f. maximum suggested gate current the maximum suggested gate current for the ATF-551M4 is 1 ma. incorporating resistor r5 in the passive bias network or resistor r6 in the active bias network safely limits gate current to 500 a at p1db drive levels. in order to minimize component count in the passive biased amplifier circuit, the 3 resistor bias circuit consisting of r1, r2, and r5 can be simplified if desired. r5 can be removed if r1 is replaced with a 5.6k ? resistor
22 ATF-551M4 die model gate source inside package port g num=1 c c1 c=0.28 pf port s1 num=2 source drain port s2 num=4 port d num=3 l l6 l=0.147 nh r=0.001 c c2 c=0.046 pf l l7 l=0.234 nh r=0.001 msub tlinp tl3 z=z2 ohm l=23.6 mil k=k a=0.000 f=1 ghz tand=0.001 tlinp tl9 z=z2 ohm l=11 mil k=k a=0.000 f=1 ghz tand=0.001 var var1 k=5 z2=85 z1=30 var egn tlinp tl1 z=z2/2 ohm l=22 mil k=k a=0.000 f=1 ghz tand=0.001 tlinp tl2 z=z2/2 ohm l=20 0 mil k=k a=0.000 f=1 ghz tand=0.001 tlinp tl7 z=z2/2 ohm l=5.2 mil k=k a=0.000 f=1 ghz tand=0.001 tlinp tl5 z=z2 ohm l=27.5 mil k=k a=0.000 f=1 ghz tand=0.001 l l1 l=0.234 nh r=0.001 l l4 l=0.281 nh r=0.001 gaasfet fet1 mode1=mesfetm1 mode=nonlinear msub msub2 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil ATF-551M4 minipak model and if r2 is replaced with a 27k ? resistor. this combination should limit gate current to a safe level. pcb layout a suggested pcb pad print for the miniature, minipak 1412 package used by the ATF-551M4 is shown in figure 3. 0.5 0.020 0.4 0.016 0.4 0.016 1.1 0.043 0.3 0.012 0.5 0.020 0.3 0.01 2 figure 3. pcb pad print for minipak 1412. package (mm [inches ]). this pad print provides allow- ance for package placement by automated assembly equipment without adding excessive parasitics that could impair the high frequency performance of the ATF-551M4. the layout is shown with a footprint of the ATF-551M4 superimposed on the pcb pads for reference. for further information the information presented here is an introduction to the use of the ATF-551M4 enhancement mode phemt. more detailed application circuit information is available from agilent technologies. consult the web page or your local agilent technologies sales representative. nfet=yes pfet=no vto=0.3 beta=0.444 lambda=72e-3 alpha=13 tau= tnom=16.85 idstc= ucrit=-0.72 vgexp=1.91 gamds=1e-4 vtotc= betatce= rgs=0.5 ohm rf= gscap=2 cgs=0.6193 pf cgd=0.1435 pf gdcap=2 fc=0.65 rgd=0.5 ohm rd=2.025 ohm rg=1.7 ohm rs=0.675 ohm ld= lg=0.094 nh ls= cds=0.100 pf rc=390 ohm crf=0.1 f gsfwd= gsrev= gdfwd= gdrev= r1= r2= vbi=0.95 vbr= vjr= is= ir= imax= xti= eg= n= fnc=1 mhz r=0.08 p=0.2 c=0.1 taumdl=no wvgfwd= wbvgs= wbvgd= wbvds= wldsmax= wpmax= allparams= advanced_curtice2_model mesfetm1
23 minipak package outline drawing ordering information part number no. of devices container ATF-551M4-tr1 3000 7 reel ATF-551M4-tr2 10,000 13 reel ATF-551M4-blk 100 antistatic bag 1.44 (0.058) 1.40 (0.056) top view side view dimensions are in millimeteres (inches) bottom view 1.20 (0.048) 1.16 (0.046) 0.70 (0.028) 0.58 (0.023) 1.12 (0.045) 1.08 (0.043) 3 2 4 1 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) -0.07 (-0.003) -0.03 (-0.001) 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.42 (0.017) 0.38 (0.015) 0.92 (0.037) 0.88 (0.035) 1.32 (0.053) 1.28 (0.051) 0.00 vx solder pad dimensions
for product information and a complete list of agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors e-mail: semiconductorsupport@agilent.com data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5988-4455en july 16, 2004 5988-9006en user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view note: vx represents package marking code. device orientation is indicated by package marking. vx vx vx vx p p 0 p 2 f w c d 1 d e a 0 5 max. t 1 (carrier tape thickness) t t (cover tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 1.40 0.05 1.53 0.05 0.80 0.05 4.00 0.10 0.80 0.05 0.055 0.002 0.064 0.002 0.031 0.002 0.157 0.004 0.031 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 - 0.004 0.010 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.213 0.004 0.0024 0.00004 cover tape a 0 b 0 device orientation for outline 4t, minipak 1412 tape dimensions

▲Up To Search▲

Price & Availability of ATF-551M4

	To Download ATF-551M4 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .